BAS56 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 29 June 2010 4 of 12
NXP Semiconductors
BAS56
High-speed double diode
7. Characteristics
[1] Tamb
=25°C; device has reached the thermal equilibrium when mounted on an FR4 PCB.
[2] Series connection.
[3] When switched from IF
= 400 mA to IR
= 400 mA; RL
= 100
Ω; measured at IR
=40mA.
[4] When switched from IF
= 400 mA; tr
=30ns.
[5] When switched from IF
= 400 mA; tr
= 100 ns.
Table 7. Characteristics
Tj
=25°C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage IF
=200mA
[1]
--1V
IR
reverse current VR
= 60 V - - 100 nA
VR
=60V;Tj
=150°C - - 100
μA
VR
=120V
[2]
- - 100 nA
VR
=120V; Tj
= 150
°C
[2]
- - 100
μA
Cd
diode capacitance f = 1 MHz; VR
=0V --2.5pF
trr
reverse recovery time
[3]
--6ns
VFR
forward recovery voltage
[4]
--2V
[5]
--1.5V
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